Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs

Viktoryia Uhnevionak (1) , Alexander Burenkov (1) , Christian Strenger (1) , Guillermo Ortiz (2) , Eléna Bedel-Pereira (2) , Vincent Mortet (3) , Fuccio Cristiano (2) , Anton J. Bauer (1) , Peter Pichler (1)

1 Fraunhofer IIS - Fraunhofer Institute for Integrated Circuits
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
3 FZU / CAS - Institute of Physics of the Czech Academy of Sciences

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.

Mots clés: Electron mobility; Hall effect; Scattering Mechanisms; SiC Mosfet; Hall Factor

Domaines: Physique [physics]

Viktoryia Uhnevionak, Alexander Burenkov, Christian Strenger, Guillermo Ortiz, Eléna Bedel-Pereira, et al.. Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs. IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩. ⟨cea-01745394⟩