Pressure dependence of Raman modes in DWCNT filled with 1D nanocrystalline PbI2 Semiconductor. - Université Toulouse III - Paul Sabatier - Toulouse INP Accéder directement au contenu
Communication Dans Un Congrès Année : 2005

Pressure dependence of Raman modes in DWCNT filled with 1D nanocrystalline PbI2 Semiconductor.

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hal-00014399 , version 1 (18-01-2006)

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  • HAL Id : hal-00014399 , version 1

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J. Gonzalez, C. Power, Jean-Marc Broto, Bertrand Raquet, B. Lassagne, et al.. Pressure dependence of Raman modes in DWCNT filled with 1D nanocrystalline PbI2 Semiconductor.. Proc. 12th Int. Conf.on Narrow Gap Semiconductors (NGS 12), 2005, Toulouse, France. ⟨hal-00014399⟩
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