SiGe HBT Nonlinear Phase Noise Modeling

Sébastien Gribaldo (1) , Laurent Bary (2) , Olivier Llopis (1)

1 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications
2 LAAS-II

A nonlinear noise model of a SiGe bipolar transistor is presented. This model includes nonlinear noise sources and is able to predict the noise conversion phenomena in circuits using this transistor and as the phse noise of an oscillator. It is based on two main low frequency noise sources, which are extracted thanks to noise measurements under large RF signal superposition. The model is compared to the experiment thanks to residual phase noise data at different RF power level.

Mots clés: noise; nonlinear modelling; SiGe HBT; phase noise

Domaines: Micro et nanotechnologies/Microélectronique

Sébastien Gribaldo, Laurent Bary, Olivier Llopis. SiGe HBT Nonlinear Phase Noise Modeling. 19th International Conference on Noise and Fluctuations - ICNF 2007, Sep 2007, Tokyo, Japan. pp.91-94. ⟨hal-00177082⟩