A Trench IGBT distributed model with thermo-sensible parameters

Rodolphe de Maglie (1, 2) , Patrick Austin (1) , L. Mussard (1) , Jean-Louis Sanchez (1) , M. Elghazouani (1) , Frédéric Richardeau (3) , Jean-Luc Schanen (4)

1 LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 PEARL - Power Electronics Associated Research Laboratory
3 ENSEEIHT - Ecole Nationale Supérieure d'Electrotechnique, d'Electronique, d'Informatique, d'Hydraulique et de Télécommunications
4 G2ELab - Laboratoire de Génie Electrique de Grenoble

In this paper, a one-dimensional physical model with thermally dependent parameters of the Trench Insulated Gate Bipolar Transistor (TIGBT) is presented. This model is implemented in the Saber simulator in MAST language. Simulation and experimental results are compared for different temperatures in order to validate the model in adiabatic conditions.

Domaines: Energie électrique

Rodolphe de Maglie, Patrick Austin, L. Mussard, Jean-Louis Sanchez, M. Elghazouani, et al.. A Trench IGBT distributed model with thermo-sensible parameters. EPE 2005, Sep 2005, Dresde, Germany. ⟨hal-00184525⟩