TCAD methodology for ESD robustness prediction of smart power ESD devices

Christophe Salamero (1) , Nicolas Nolhier (1) , Amaury Gendron (2) , Marise Bafleur (1) , Patrice Besse (2) , Michel Zecri (2)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 Freescale Semiconducteurs

This work presents a new method to predict the ESD protection robustness of a device with TCAD simulations. Tested on different devices and two Smart Power technologies, the results are validated through electrical measurement and failure analysis. Failure current is always predicted with a good accuracy compared to technology spreading. In addition, the methodology provides a significant simulation time speedup compared to classical methods based on a temperature criterion.

Mots clés: technology in computer aided design (TCAD) simulation; Electrostatic discharge (ESD); predictive simulation; robustness; Smart Power technology

Domaines: Micro et nanotechnologies/Microélectronique

Christophe Salamero, Nicolas Nolhier, Amaury Gendron, Marise Bafleur, Patrice Besse, et al.. TCAD methodology for ESD robustness prediction of smart power ESD devices. IEEE Transactions on Device and Materials Reliability, 2006, 6 (3), pp.399-407. ⟨hal-00195294⟩