A 6-GHz Low-Power BiCMOS SiGe:C 0.25 μm Direct Digital Synthesizer

Stéphane Thuries (1) , Éric Tournier (1) , Andreia Cathelin (2) , Sylvain Godet (1) , Jacques Graffeuil (1)

1 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications
2 ST-CROLLES - STMicroelectronics [Crolles]

A 6-GHz low power SiGe direct digital synthesizer (DDS) is reported. This paper discusses the BiCMOS design improvements used for the phase accumulator and the phase-to-amplitude conversion in order to achieve higher speed operation and lower power consumption compared to existing DDS. The phase accumulator is based on a three-level BiCMOS logic, and the phase-to-amplitude conversion is completed through a bipolar differential pair. The circuit has been processed in a BiCMOS SiGe:C 0.25 μm technology. The power consumption is 308 mW and it operates from a 2.8 V supply. The chip core area is 1 mm²

Mots clés: DDS; digital direct synthesizer; low power; BiCMOS; SiGe

Domaines: Electronique

Stéphane Thuries, Éric Tournier, Andreia Cathelin, Sylvain Godet, Jacques Graffeuil. A 6-GHz Low-Power BiCMOS SiGe:C 0.25 μm Direct Digital Synthesizer. IEEE Microwave and Wireless Components Letters, 2008, 18 (1), pp.46 - 48. ⟨10.1109/LMWC.2007.911994⟩. ⟨hal-00257982⟩