Skip to Main content Skip to Navigation
Conference papers

79GHz Push-Push Oscillators in 0.13µm SiGe BiCMOS Technology

Chama Ameziane 1 Thierry Taris 1 Robert Plana 2 Franck Badets 3 Yann Deval 1 Jean-Baptiste Begueret 1
1 IMS - Laboratoire de l'intégration, du matériau au système
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 ST-CROLLES - STMicroelectronics [Crolles]
Abstract : This paper describes VCO designs based on varactor tuned Push-Push architecture. Two versions (powered under 1.2V and 1.8V) of the 79GHz oscillators have been designed in a 0.13µm SiGe BiCMOS technology, thus targeting automotive Radar and millimeter-wave applications. Their tuning ranges are respectively set on 6GHz (7.6%) and 7GHz (8.8%). The oscillator cores solely consume 18mW and 30mW, and both achieve low phase noise characteristics -102dBc/Hz at 1MHz offset from the carrier frequency (80GHz) and output powers of 18dBm and 0dBm respectively.
Document type :
Conference papers
Complete list of metadata
https://hal.archives-ouvertes.fr/hal-00294174
Contributor : Equipe Conception de Circuits <>
Submitted on : Tuesday, July 8, 2008 - 4:07:59 PM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM

Identifiers

  • HAL Id : hal-00294174, version 1

Collections

CNRS | INSA-TOULOUSE | IMS-BORDEAUX | IMS-BORDEAUX-FUSION | LAAS | INSA-GROUPE | UNIV-TLSE3 | UT1-CAPITOLE | UNIV-TLSE2

Citation

Chama Ameziane, Thierry Taris, Robert Plana, Franck Badets, Yann Deval, et al.. 79GHz Push-Push Oscillators in 0.13µm SiGe BiCMOS Technology. IEEE International Conference on Electronics, Circuits, and Systems, Sep 2008, Malta. pp.51-69. ⟨hal-00294174⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

256