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79GHz Push-Push Oscillators in 0.13µm SiGe BiCMOS Technology

Abstract : This paper describes VCO designs based on varactor tuned Push-Push architecture. Two versions (powered under 1.2V and 1.8V) of the 79GHz oscillators have been designed in a 0.13µm SiGe BiCMOS technology, thus targeting automotive Radar and millimeter-wave applications. Their tuning ranges are respectively set on 6GHz (7.6%) and 7GHz (8.8%). The oscillator cores solely consume 18mW and 30mW, and both achieve low phase noise characteristics -102dBc/Hz at 1MHz offset from the carrier frequency (80GHz) and output powers of 18dBm and 0dBm respectively.
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Conference papers
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Contributor : Equipe Conception de Circuits <>
Submitted on : Tuesday, July 8, 2008 - 4:07:59 PM
Last modification on : Friday, January 10, 2020 - 9:08:09 PM


  • HAL Id : hal-00294174, version 1


Chama Ameziane, Thierry Taris, Robert Plana, Franck Badets, Yann Deval, et al.. 79GHz Push-Push Oscillators in 0.13µm SiGe BiCMOS Technology. IEEE International Conference on Electronics, Circuits, and Systems, Sep 2008, Malta. pp.51-69. ⟨hal-00294174⟩



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