Graphene-metal interface: Two-terminal resistance of low-mobility graphene in high magnetic fields

V. Krstic (1) , D. Obergfell (2) , S. Hansel (3) , Rikken G.L.J.A. (3) , J. Blokland (4) , M. Ferreira (1) , S. Roth (2)

1 Trinity College Dublin
2 Max-Planck-Institut für Festkörperforschung
3 LNCMP - Laboratoire National des Champs Magnétiques Pulsés
4 Radboud University [Nijmegen]

The two-terminal magnetotransport of a single graphene layer was investigated up to a field of 55 T. The dependence of the electron transmission probability at the organo−metallic interface between the graphene and the metal electrodes was studied as a function of filling factor and electron density. A resistance-plateau spanning several tens of tesla width was observed. We argue that this plateau originates from an augmented sublattice spin-splitting due to the high surface-impurity concentration of the graphene layer. At electron densities close to the Dirac point, fingerprints of a thermally activated energy gap were observed.

Domaines: Supraconductivité [cond-mat.supr-con]

V. Krstic, D. Obergfell, S. Hansel, Rikken G.L.J.A., J. Blokland, et al.. Graphene-metal interface: Two-terminal resistance of low-mobility graphene in high magnetic fields. Nano Letters, 2008, 8 (6), pp.1700-1703. ⟨10.1021/nl080634k⟩. ⟨hal-00355407⟩