Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements

Yuan Gao (1) , Nicolas Guitard (2) , Christophe Salamero (2) , Marise Bafleur (2) , Laurent Bary (3) , Laurent Escotte (4) , Patrick Gueulle (1) , Lionel Lescouzères (1)

1 ON Semiconductor
2 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
3 LAAS-II
4 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications

In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DC-DC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techniques such as Iddq or functionality test fail. In addition, a correlation between the noise signature and the nature of the defect is established. In particular, the presence of trapped charges in the oxides is clearly identified.

Mots clés: ESD; latent defect; low frequency noise; CDM

Domaines: Micro et nanotechnologies/Microélectronique

Yuan Gao, Nicolas Guitard, Christophe Salamero, Marise Bafleur, Laurent Bary, et al.. Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements. Microelectronics Reliability, 2007, 47 (9-11), pp.1456-1461. ⟨hal-00385697⟩