A 24 GHz, 18 dBm fully integrated power amplifier in a 0.13μm SiGe HBT technology

Nejdat Demirel (1) , Eric Kerhervé (2) , Robert Plana (3) , Denis Pache (4)

1 IMS
2 IMS - Laboratoire de l'intégration, du matériau au système
3 LAAS - Laboratoire d'analyse et d'architecture des systèmes
4 ST-CROLLES - STMicroelectronics [Crolles]

A 24GHz, +18.0dBm fully-integrated power amplifier (PA) with 50Ω input and output matching is designed in 0.13μm SiGe BiCMOS process. The power amplifier features a peak power gain of 7.8dB with 15.89 dBm output power at 1dB compression and a maximum single-ended output power of +18.0dBm with 25.9% of power-added efficiency (PAE). The power amplifier uses a single 1.8 V supply and was fully integrated (including matching elements and bias circuit). The matching networks use inductors and MIM capacitors for high integration purpose, the circuit occupies a small area of 0.3mm² (including pads and matching networks).

Mots clés: Power Amplifier; 24GHz; 0.13μm; SiGe; Radar

Domaines: Electronique

Nejdat Demirel, Eric Kerhervé, Robert Plana, Denis Pache. A 24 GHz, 18 dBm fully integrated power amplifier in a 0.13μm SiGe HBT technology. Ph.D Research in Microelectronics and Electronics (Prime) 2008, Jun 2008, Istanbul, Turkey. pp. 185-188. ⟨hal-00402636⟩