Local ESD protection structure based on Silicon Controlled Rectifier achieving very low overshoot voltage

Johan Bourgeat (1) , Christophe Entringer (1) , Philippe Galy (1) , Pascal Fonteneau (1) , Marise Bafleur (2)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

This paper presents a new local ESD protection structure. This structure is based on static triggered SCR and realized in a 45nm CMOS technology node. This protection achieves very low static triggering voltage, low on-resistance, low DC leakage current for off configurations. This new structure is latch-up free and fail safe.

Mots clés: 45nm CMOS technology; ESD; SCR; overshoot

Domaines: Micro et nanotechnologies/Microélectronique

Johan Bourgeat, Christophe Entringer, Philippe Galy, Pascal Fonteneau, Marise Bafleur. Local ESD protection structure based on Silicon Controlled Rectifier achieving very low overshoot voltage. 31st Electrical Overstress/Electrostatic Discharge Symposium, 2009. EOS/ESD 2009, Aug 2009, ANAHEIM, United States. pp.314-321. ⟨hal-00445672⟩