Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications

Pierre-Eugène Coulon , B.S. Sahu (1) , Marzia Carrada (1) , Sylvie Schamm-Chardon (2) , Gérard Benassayag , Béatrice Pécassou , A. Slaoui (1) , S. Lhostis (3) , Caroline Bonafos (2)

1 InESS - Institut d'Electronique du Solide et des Systèmes
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 LMGP - Laboratoire des matériaux et du génie physique

Pierre-Eugène Coulon, B.S. Sahu, Marzia Carrada, Sylvie Schamm-Chardon, Gérard Benassayag, et al.. Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications. 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009), Sep 2009, ATHENES, Greece. ⟨hal-00463965⟩