Preparation of delafossite CuFeO2 thin films by rf-sputtering on conventional glass substrate

Antoine Barnabé (1) , Emmanuelle Mugnier (1) , Lionel Presmanes (1) , Philippe Tailhades (1)

1 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux

CuFeO2 CuFeO2 is a delafossite-type compound and is a well known p-type semiconductor. The growth of delafossite CuFeO2 thin films on conventional glass substrate by radio-frequency sputtering is reported. The deposition, performed at room temperature leads to an amorphous phase with extremely low roughness and high density. The films consisted of a well crystallized delafossite CuFeO2 after heat treatment at 450 °C in inert atmosphere. The electrical conductivity of the film was 1 mS/cm. The direct optical band gap was estimated to be 2 eV.

Mots clés: Delafossite; Oxide; Thin film; Rf-sputtering; Synthesis

Domaines: Matériaux

Antoine Barnabé, Emmanuelle Mugnier, Lionel Presmanes, Philippe Tailhades. Preparation of delafossite CuFeO2 thin films by rf-sputtering on conventional glass substrate. Materials Letters, 2006, 60 (29-30), pp.3468-3470. ⟨10.1016/j.matlet.2006.03.033⟩. ⟨hal-03598184⟩