Gate-dependent magnetoresistance phenomena in carbon nanotubes

G. Fedorov (1) , Benjamin Lassagne (1) , Mathieu Sagnes (1) , Bertrand Raquet (1) , Jean-Marc Broto (1) , François Triozon (2) , Stephan Roche (2) , Emmanuel Flahaut (3)

1 LNCMP - Laboratoire National des Champs Magnétiques Pulsés
2 CEA - Commissariat à l'énergie atomique et aux énergies alternatives
3 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux

We report on the first experimental study of the magnetoresistance of double-walled carbon nanotubes under magnetic field as large as 50 Tesla. By varying the field orientation with respect to the tube axis, or by gate-mediated shifting the Fermi level position, evidences for unconventional magnetoresistance are presented and interpreted by means of theoretical calculations.

Mots clés: Nanotube carbone; Tension polarisation; Dependance tension; Niveau Fermi; Orientation champ; Effet champ magnétique; Magnetoresistance

Domaines: Matériaux

G. Fedorov, Benjamin Lassagne, Mathieu Sagnes, Bertrand Raquet, Jean-Marc Broto, et al.. Gate-dependent magnetoresistance phenomena in carbon nanotubes. Physical Review Letters, 2005, 9, pp.066801.1-066801.4. ⟨10.1103/PhysRevLett.94.066801⟩. ⟨hal-03601122⟩