Accurate Active Device Characterization for a 60GHz 65nm-CMOS Power Amplifier Realization

Sofiane Aloui (1) , Didier Belot (2) , Eric Kerherve (1) , Robert Plana (3)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 ST-CROLLES - STMicroelectronics [Crolles]
3 LAAS - Laboratoire d'analyse et d'architecture des systèmes

A fully integrated Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN). It is based on the 65nm CMOS technology from STMicroelectronics. The PA is matched without serial transmission lines (T-Lines) to reach good performances and low die area. S-parameters and load pull measurement results are demonstrated and compared with electromagnetic simulations for the power transistor. The PA is optimized to deliver the maximum saturated output power (P_sat) under class A biasing. The PA offers a P_sat of 8.3dBm, an Output Compression Point OCP1 of 6.3dBm and a gain of 6.7dB. The die area is 0.29mm^2 with pads.

Mots clés: 0GHz; CMOS; Load pull measurements; millimeter wave power amplifiers

Domaines: Micro et nanotechnologies/Microélectronique

Sofiane Aloui, Didier Belot, Eric Kerherve, Robert Plana. Accurate Active Device Characterization for a 60GHz 65nm-CMOS Power Amplifier Realization. IEEE International NEWCAS Conference, Jun 2010, Montreal, Canada. pp.309-312. ⟨hal-00481308⟩