59-71GHz Wideband MMIC Balanced Power Amplifier in a 0.13um SiGe Technology

Nejdat Demirel (1) , Eric Kerherve (1) , Robert Plana (2) , Denis Pache (3) , Didier Belot (3)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 ST-CROLLES - STMicroelectronics [Crolles]

This paper presents the performance of a wideband 0.13μm BiCMOS SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design and the measured results of a monolithic integrated low-voltage PA are reported. A balanced four-stage common emitter circuit topology was used to achieve greater than 17dB of power gain from 59 GHz to 71GHz. As a result, the amplifier delivers 18dBm of maximum RF output power and 14.5dBm output power at 1dB compression. The circuit shows 7.8% of power added efficiency (PAE) from a 1.8V supply voltage at 65 GHz. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors for high integration purpose.

Mots clés: coplanar waveguide (CPW); Wideband Power Amplifier; 0.13μm BiCMOS SiGe; millimeter wave

Domaines: Electronique

Nejdat Demirel, Eric Kerherve, Robert Plana, Denis Pache, Didier Belot. 59-71GHz Wideband MMIC Balanced Power Amplifier in a 0.13um SiGe Technology. 39th IEEE European Microwave Conference, EUMC '09,, 2009, Rome, Italy. pp.1852 - 1855. ⟨hal-00481780⟩