Design Techniques and Considerations for mmWave SiGe Power Amplifiers

Nejdat Demirel (1) , Eric Kerherve (1) , Robert Plana (2) , Denis Pache (3)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 ST-CROLLES - STMicroelectronics [Crolles]

This paper describes the techniques to design a SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design methodology of a balanced four-stage common emitter circuit topology was reported. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors. Design considerations including parasitic elements, interconnections, pad model and matching structures are detailed. All these elements are taken into account to optimize the maximum output power. A comparison of the simulated and measured small-signal results is presented up to 110GHz. The simulated and measured large-signal parameters are shown at 60, 65 and 77GHz.

Mots clés: Design considerations; millimeter wave applications; SiGe Power Amplifier

Domaines: Electronique

Nejdat Demirel, Eric Kerherve, Robert Plana, Denis Pache. Design Techniques and Considerations for mmWave SiGe Power Amplifiers. SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE (2009), Nov 2009, Para-Belem, Brazil. pp.37 - 41. ⟨hal-00481785⟩