Achievement of InSb Quantum Dots on InP(100) Substrates

Wei Lu (1) , Tony Rohel (1) , Nicolas Bertru (1) , Hervé Folliot (1) , Cyril Paranthoën (1) , Jean-Marc Jancu (1) , Antoine Létoublon (1) , Alain Le Corre (1) , Christophe Gatel (2) , Anne Ponchet (2, 3) , Nicolas Combe (2, 3) , J.-M. Ulloa (4) , Paul Koenraad (4)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 CEMES-SINanO - Surfaces, Interfaces et Nano-Objets
4 COBRA - Cobra

The formation of InSb quantum dots within a GaAs0:51Sb0:49 matrix lattice matched to InP is investigated. We show that the deposit of InSb on GaAs0:51Sb0:49 alloy surface, allows the achievement of a high density of InSb islands without dislocations. A strong dissolution of InSb quantum dots occurs during the capping with a GaAsSb layer. Reflection high energy electron diffraction analysis shows that InSb island dissolution occurs during the growth interruption under As and Sb. We propose a procedure based on the deposit of a thin GaSb capping layer on top of InSb islands to prevent the As/Sb exchange. Optical properties are investigated using photoluminescence. Electronic properties are discussed within an improved tight-binding model.

Domaines: Optique / photonique

Wei Lu, Tony Rohel, Nicolas Bertru, Hervé Folliot, Cyril Paranthoën, et al.. Achievement of InSb Quantum Dots on InP(100) Substrates. Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, pp.060210-1. ⟨10.1143/JJAP.49.060210⟩. ⟨hal-00489868⟩