Crystal structure, band structure and electrical properties of kappa-(BEDT-TTF)(2)SbF6 grown on a Si(001) electrode - Université Toulouse III - Paul Sabatier - Toulouse INP Accéder directement au contenu
Article Dans Une Revue Synthetic Metals Année : 2010

Crystal structure, band structure and electrical properties of kappa-(BEDT-TTF)(2)SbF6 grown on a Si(001) electrode

Résumé

The new kappa-(BEDT-TTF)(2)SbF6 phase was grown by electrodeposition on a Si(0 0 1) electrode. This new phase was characterized by X-ray diffraction (XRD) and electronic conductivity measurements, accompanied by calculations of electronic band structures and Fermi surfaces. Below T = 120 K, a decrease in the electronic conductivity suggests a phase transition, attributed to anion ordering. (C) 2009 Elsevier B.V. All rights reserved.

Dates et versions

hal-00491055 , version 1 (10-06-2010)

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Aneta Aniela Kowalska, Jean-Philippe Savy, Dominique de Caro, Isabelle Malfant, C. Faulmann, et al.. Crystal structure, band structure and electrical properties of kappa-(BEDT-TTF)(2)SbF6 grown on a Si(001) electrode. Synthetic Metals, 2010, 160, pp.556-560. ⟨10.1016/j.synthmet.2009.12.002⟩. ⟨hal-00491055⟩
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