Linking hopping conductivity to giant dielectric permittivity in oxides

Alla Artemenko (1, 2) , Catherine Elissalde (1) , U-Chan Chung Seu (1) , Claude Estournès (3) , Stéphane Mornet (1) , I. Bykov (2) , Mario Maglione (1)

1 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux
2 Institute for Problems of Material Science
3 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux

With the promise of electronics breakthrough, giant dielectric permittivity materials are under deep investigations. In most of the oxides where such behavior was observed, charged defects at interfaces are quoted for such giant behavior to occur but the underlying conduction and localization mechanisms are not well known. Comparing macroscopic dielectric relaxation to microscopic dynamics of charged defects resulting from electron paramagnetic resonance investigations we identify the actual charged defects in the case of BaTiO3 ceramics and composites. This link between the thermal activation at these two complementary scales may be extended to the numerous oxides were giant dielectric behavior was found.

Mots clés: Hopping conduction; Paramagnetic resonance; Permittivity; Silicon compounds; Matériaux; Barium compounds; Dielectric relaxation; Ferroelectric ceramics

Domaines: Matériaux; Matériaux

Alla Artemenko, Catherine Elissalde, U-Chan Chung Seu, Claude Estournès, Stéphane Mornet, et al.. Linking hopping conductivity to giant dielectric permittivity in oxides. Applied Physics Letters, 2010, 93 (13), 132901 (3 p.). ⟨10.1063/1.3495779⟩. ⟨hal-00530394⟩