A 59GHz-to-67GHz 65nm-CMOS High Efficiency Power Amplifier

Sofiane Aloui (1) , Robert Plana (2) , Didier Belot (3) , Eric Kerhervé (1)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 ST-CROLLES - STMicroelectronics [Crolles]

A two-stage single-ended Power Amplifier (PA) is fabricated fot the 60 GHz Wireless Personal Area Network (WPAN). stardard. It is based on the 65nm CMOS technology from STMicroelectronics. The PA is biased in class A and uses distributed elements to perform impedances matching. Sparameters and large signal simulations are validated by measurement results. Load pull measurements are performed to get the best operation of the PA. It achieves a saturated output power (Psat) of 12 dB and offers Power Added Efficiency (PAE) of 15 %. The die area is 0.29mm2 with pads.

Domaines: Electronique

Sofiane Aloui, Robert Plana, Didier Belot, Eric Kerhervé. A 59GHz-to-67GHz 65nm-CMOS High Efficiency Power Amplifier. NEWCAS 2011, Jun 2011, BORDEAUX, France. pp.52-58. ⟨hal-00619441⟩