Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

M. Orlita (1) , C. Faugeras (1) , J. Borysiuk , J. M. Baranowski (2, 3) , W. Strupinski (3) , M. Sprinkle , C. Berger (4) , W. A. de Heer , D. M. Basko (5) , Gerard Martinez (1) , M. Potemski (1)

1 LNCMI-G - Laboratoire national des champs magnétiques intenses - Grenoble
2 IFD - Institute of Experimental Physics [Warsaw]
3 IEMT - Institute of Electronic Materials Technology
4 LSGC - Laboratoire des Sciences du Génie Chimique
5 LPM2C - Laboratoire de physique et modélisation des milieux condensés

Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.

Domaines: Autre [cond-mat.other]

M. Orlita, C. Faugeras, J. Borysiuk, J. M. Baranowski, W. Strupinski, et al.. Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.125302. ⟨hal-00638155⟩