Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs Quantum Wells

Mustafa Gunes (1) , N. Balkan (2) , Engin Tiras (3) , Sukru Ardali (3) , Chantal Fontaine (4) , Alexandre Arnoult (4)

1 CSEE - School of Computer Science and Electronic Engineering [Essex]
2 Department of Computing and Electronic Systems, University of Essex, CO4 3SQ Colchester, United Kingdom
3 Physics
4 LAAS - Laboratoire d'analyse et d'architecture des systèmes

Electronic transport in n and p-type modulation-doped Ga0.7In0.3N0.015As0.985 /GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T=1.8 and 32 K and at magnetic fields up to B=11 T. The momentum relaxation and the quantum lifetimes (q) of electrons and holes are obtained directly from the temperature and magnetic field dependencies of the SdH oscillation amplitudes respectively. A detailed analysis of quantum and transport life times indicates that the momentum relaxation of holes is forward displaced in k-space whilst a large angle scattering mechanism is prominent for the electrons. This discrepancy is believed to be due to scattering of electrons with heavy nitrogen complexes and to the lack of such a mechanism for holes.

Mots clés: Physical Sciences

Mustafa Gunes, N. Balkan, Engin Tiras, Sukru Ardali, Chantal Fontaine, et al.. Quantum lifetimes and momentum relaxation of electrons and holes in Ga0.7In0.3N0.015As0.985/GaAs Quantum Wells. Philosophical Magazine, 2010, pp.1. ⟨10.1080/14786435.2010.525543⟩. ⟨hal-00639780⟩