Integer quantum hall effect in trilayer graphene

A. Kumar (1, 2) , Walter Escoffier (2) , Jean-Marie Poumirol (2) , C. Faugeras (3) , D. P. Arovas , M. M. Fogler , F. Guinea , S. Roche , Michel Goiran (2) , Bertrand Raquet (2)

1 GSI - Helmholtz zentrum für Schwerionenforschung GmbH
2 LNCMI-T - Laboratoire national des champs magnétiques intenses - Toulouse
3 LNCMI-G - Laboratoire national des champs magnétiques intenses - Grenoble

By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of nu = 2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers.

Domaines: Supraconductivité [cond-mat.supr-con]

A. Kumar, Walter Escoffier, Jean-Marie Poumirol, C. Faugeras, D. P. Arovas, et al.. Integer quantum hall effect in trilayer graphene. Physical Review Letters, 2011, 107, pp.126806. ⟨10.1103/PhysRevLett.107.126806⟩. ⟨hal-00642704⟩