Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences

Binhong Li (1) , Nestor Berbel (2) , Alexandre Boyer (1) , Sonia Ben Dhia (1) , Raul Fernandez-Garcia (2)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 UPC - Universitat Politècnica de Catalunya = Université polytechnique de Catalogne [Barcelona]

This paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of failures in analog circuits. Measurements and simulations based on a simple model (Sakurai-Newton model) of fresh and stressed transistors are presented showing significant variations of EMI-induced DC shifts of drain current.

Mots clés: Hot Carrier Injection; Electromagnetic Interferences; Nth power law

Domaines: Electronique

Binhong Li, Nestor Berbel, Alexandre Boyer, Sonia Ben Dhia, Raul Fernandez-Garcia. Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences. European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011), Oct 2011, Bordeaux, France. pp.1557. ⟨hal-00669726⟩