Nanoscale characterization of different stiction mechanisms in electrostatic RF-MEMS switches

Heiba Zaghloul (1) , Bharat Bhushan (2) , Patrick Pons (1) , George Papaioannou (3) , Fabio Coccetti (1) , Robert Plana (1)

1 LAAS-MINC - Équipe MIcro et Nanosystèmes pour les Communications sans fil
2 Nanoprobe Laboratory for Bio- and Nanotechnology and Biomimetics
3 DI NKUA - Department of Informatics and Telecomunications [Kapodistrian Univ]

In this work, for the first time different stiction mechanisms in electrostatic RF-MEMS switches were studied. Stiction is caused by two main mechanisms: dielectric charging and meniscus formation resulting from the adsorbed water film between the switch bridge and the dielectric layer. The effect of each mechanism and their interaction were investigated by measuring the adhesive force under different electrical stress conditions and relative humidity levels. An atomic force microscope (AFM) was used to perform force-distance measurements on the nanoscale. The study provides an in-depth understanding of different stiction mechanisms, and explanation for the literature reported device level measurements for electrostatic capacitive MEMS switches.

Mots clés: Stiction; dielectric charging; RF-MEMS switch; adhesion force; force-distance; field-induced meniscus

Domaines: Micro et nanotechnologies/Microélectronique

Heiba Zaghloul, Bharat Bhushan, Patrick Pons, George Papaioannou, Fabio Coccetti, et al.. Nanoscale characterization of different stiction mechanisms in electrostatic RF-MEMS switches. European Microwave Week 2011 (EuMC 2011), Oct 2011, Manchester, United Kingdom. 5 p. ⟨hal-00670114⟩