Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding

Bassem Mouawad (1) , Maher Soueidan (1) , D. Fabregue (2) , Cyril Buttay (1) , Bruno Allard (3) , Vincent Bley (4) , Hervé Morel (1) , Christian Martin (1)

1 AMPERE - Ampère
2 MATEIS - Matériaux, ingénierie et science [Villeurbanne]
3 EE - Ampère, Département Energie Electrique
4 LAPLACE-MDCE - Matériaux Diélectriques dans la Conversion d’Energie

Planar structures, in which a power die is soldered on a substrate and wirebonds are used to connect the top of the die with the substrate, are limited in terms of thermal management and power density. Three-dimensional packaging techniques have been proposed to overcome these limits. Here, an innovative copper-to-copper bonding solution is presented, that can be used for 3-D packaging. The bonding process is described and the effect of the bonding parameters is investigated. It is found that this technique is compatible with the requirements of power electronic packaging. A test assembly including a silicon power die and ceramic substrates is presented.

Mots clés: semiconductor device packaging; Three-dimensional packaging; power electronics; Spark Plasma Sintering; Three-dimensional packaging.

Domaines: Autre; Electronique

Bassem Mouawad, Maher Soueidan, D. Fabregue, Cyril Buttay, Bruno Allard, et al.. Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding. IEEE Transactions on Components and Packaging Technologies, 2012, 2 (4), pp.553 - 560. ⟨10.1109/TCPMT.2012.2186453⟩. ⟨hal-00672244⟩