Extending ballistic graphene FET lumped element models to diffusive devices

Giancarlo Vincenzi (1) , Georgios Deligeorgis (1) , Fabio Coccetti (1) , M. Dragoman (2) , Luca Pierantoni (3) , Davide Mencarelli (3) , Robert Plana (4)

1 LAAS-MINC - Équipe MIcro et Nanosystèmes pour les Communications sans fil
2 National Institute for Research and Development in Microtechnologies
3 DIIGA - Dipartimento di Ingegneria Informatica, Gestionale e dell'Automazione
4 LAAS - Laboratoire d'analyse et d'architecture des systèmes

In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the ''Top-of-the-barrier'' approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained.

Mots clés: graphene; Device model; ballistic; Ambipolar transport; GNR; FET; Transistor

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

Giancarlo Vincenzi, Georgios Deligeorgis, Fabio Coccetti, M. Dragoman, Luca Pierantoni, et al.. Extending ballistic graphene FET lumped element models to diffusive devices. Solid-State Electronics, 2012, 76, pp.8-12. ⟨10.1016/j.sse.2012.06.004⟩. ⟨hal-00718929⟩