Compositional characterization of SiC-SiO2 interfaces in MOSFETs

Anna Maria Beltrán (1, 2) , Sylvie Schamm-Chardon (3) , Vincent Mortet (2) , Eléna Bedel-Pereira (2) , Fuccio Cristiano (2) , C. Strenger (4) , Aj Bauer (4)

1 CEMES - Centre d'élaboration de matériaux et d'études structurales
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
4 Fraunhofer IISB - Fraunhofer Institute for Integrated Systems and Device Technology

In the context of the MobiSiC project (Mobility engineering for SiC devices) we study 4H-SiC MOSFETs with the aim to get more insight in the C distribution and nature across the SiC-SiO2 interface and to correlate the results with electron mobility measurements. Investigations are based on the combination of structural and compositional analyses carried out by high resolution transmission electron microscopy (HRTEM) and spatially resolved EELS.

Mots clés: transmission electron microscopy; EELS; MOSFETs

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Anna Maria Beltrán, Sylvie Schamm-Chardon, Vincent Mortet, Eléna Bedel-Pereira, Fuccio Cristiano, et al.. Compositional characterization of SiC-SiO2 interfaces in MOSFETs. 15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p. ⟨hal-00720226⟩