High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power technology

Houssam Arbess (1) , David Trémouilles (1) , Marise Bafleur (1)

1 LAAS - Laboratoire d'analyse et d'architecture des systèmes

We propose a new MOS-IGBT power clamp for high-temperature operation providing a very compact high-robustness ESD protection with low temperature sensitivity. It is achieved by inserting in the same LDMOS device P+ diffusions in the drain with various N+/P+ ratios whose impact on RON and holding current at high temperatures is thoroughly studied.

Mots clés: Electrostatic Discharge (ESD); high temperature; IGBT; SCR; SOI technology

Domaines: Micro et nanotechnologies/Microélectronique

Houssam Arbess, David Trémouilles, Marise Bafleur. High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power technology. Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Sep 2011, ANAHEIM, United States. pp.1B.2-1B.8. ⟨hal-00722642⟩