Behavioral ESD Protection Modeling to perform System Level ESD Efficient Design

Fabrice Caignet (1) , Nicolas Monnereau (1) , Nicolas Nolhier (1) , Marise Bafleur (1)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

For both Equipment Manufacturers (EM) and semiconductor suppliers, the prediction of ElectroStatic Discharge (ESD) events into design phase is becoming a challenging issue to insure rehability into system level considerations. This is mainly due to the shrinking of Integrated Circuits (IC) technology, which decreases the robustness level and increase the probability of failures. In this paper, we will present how to build IC's models taking into account behavioral description of ESD protections, to perform system level ESD simulations. The IBIS (Input/output Buffer Information Specification) models are mixed with information extracted from Transmission Line Pulsing (TLP) measurement's techniques to build system simulations. The methodology is detailed and proved in some case studies addressing the current propagation path and the susceptibility of the ICs. The main goal of the proposed model is that it could be shared by IC suppliers and EMs to ensure that ICs can handle system level ESD events.

Mots clés: System Level ESD; EMC; IBIS

Domaines: Micro et nanotechnologies/Microélectronique

Fabrice Caignet, Nicolas Monnereau, Nicolas Nolhier, Marise Bafleur. Behavioral ESD Protection Modeling to perform System Level ESD Efficient Design. Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC), May 2012, SINGAPORE, Singapore. pp.401-404. ⟨hal-00722644⟩