Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon

Thanh Tra Nguyen (1) , Cédric Robert Robert (1) , Weiming Guo (1) , Antoine Létoublon (1) , Charles Cornet (1) , Georges Elias (2) , Anne Ponchet (2, 3) , Tony Rohel (1) , Nicolas Bertru (1) , Andrea Balocchi (4) , Olivier Durand (1) , Jean-Sébastien Micha (5) , Mathieu Perrin (1) , Slimane Loualiche (1) , Xavier Marie (4) , Alain Le Corre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 CEMES-SINanO - Surfaces, Interfaces et Nano-Objets
4 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse
5 PCI - Polymères Conducteurs Ioniques

We report a structural study of molecular beam epitaxy-grown lattice-matched GaP/Si(0 0 1) thin layers with an emphasis on the interfacial structural properties, and optical studies of GaAsP(N)/GaP(N) quantum wells coherently grown onto the GaP/Si pseudo substrates, through a complementary set of characterization tools. Room temperature photoluminescence at 780 nm from the (GaAsPN/GaPN) quantum wells grown onto a silicon substrate is reported. Despite this good property, the time-resolved photoluminescence measurements demonstrate a clear influence of non-radiative defects initiated at the GaP/Si interface. It is shown from simulations, how x-ray diffraction can be used efficiently for analysis of antiphase domains. Then, qualitative and quantitative analyses of antiphase domains, micro-twins, and stacking faults are reported using complementarity of the local transmission electron microscopy and the statistical x-ray diffraction approaches.

Domaines: Optique / photonique

Thanh Tra Nguyen, Cédric Robert Robert, Weiming Guo, Antoine Létoublon, Charles Cornet, et al.. Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon. Journal of Applied Physics, 2012, 112 (5), pp.053521. ⟨10.1063/1.4751024⟩. ⟨hal-00726722⟩