Raman G band in double-wall carbon nanotubes combining p doping and high pressure

Pascal Puech (1) , Ahmad Ghandour (2) , Andrei Sapelkin (2) , Cyril Tinguely (3) , Emmanuel Flahaut (3) , David J. Dunstan (2) , Wolfgang Bacsa (1)

1 CEMES - Centre d'élaboration de matériaux et d'études structurales
2 UCL - University College of London [London]
3 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux

We use sulfuric acid as pressure medium to extrapolate the G-band position of the inner and outer tubes of double-wall carbon nanotubes. Keeping the G-band position of the inner and outer tubes constant, we can determine the fraction of double-wall and single-wall tubes in samples containing a mixture of the two. A-band-related electronic interwall interaction at 1560 cm−1 is observed, which is associated with the outer tube walls. This band is observed to shift with pressure at the same rate as the G band of outer tubes and is not suppressed with chemical doping. Differences in the interwall interaction is discussed for double-wall carbon nanotubes grown by the catalytic chemical-vapor method and double-wall carbon nanotubes obtained through transformation of peapods.

Mots clés: carbon nanotubes; doping; Raman spectra; solid-state phase transformations

Domaines: Matériaux

Pascal Puech, Ahmad Ghandour, Andrei Sapelkin, Cyril Tinguely, Emmanuel Flahaut, et al.. Raman G band in double-wall carbon nanotubes combining p doping and high pressure. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, vol. 78, pp.045413-1. ⟨10.1103/PhysRevB.78.045413⟩. ⟨hal-00806029⟩