A. E. Kaloyelos, A. Feng, J. Garhart, K. C. Brooks, S. K. Ghosh et al., Low-temperature metal-organic chemical vapor deposition (LTMOCVD) of device-quality copper films for microelectronic applications, Journal of Electronic Materials, vol.59, issue.3, p.271, 1990.
DOI : 10.1007/BF02733818

M. J. Hampden-smith and T. T. Kodas, Chemical vapour deposition of copper from (hfac)CuL compounds, Polyhedron, vol.14, issue.6, p.699, 1995.
DOI : 10.1016/0277-5387(94)00401-Y

Z. Li, A. Rahtu, and R. G. Gordon, Atomic Layer Deposition of Ultrathin Copper Metal Films from a Liquid Copper(I) Amidinate Precursor, Journal of The Electrochemical Society, vol.153, issue.11, p.787, 2006.
DOI : 10.1149/1.2338632

G. M. Whiteside and J. S. Fleming, A nuclear magnetic resonance study of .sigma.-cyclopentadienyl(triethylphosphine)copper(I), Journal of the American Chemical Society, vol.89, issue.12, p.2855, 1967.
DOI : 10.1021/ja00988a011

K. Hara, T. Kojima, and H. Kukimoto, by Metalorganic Chemical Vapor Deposition, Japanese Journal of Applied Physics, vol.26, issue.Part 2, No. 7, p.1107, 1987.
DOI : 10.1143/JJAP.26.L1107

. Fig, L n of growth rate vs. 1000/K on stainless steel (upper trace: sublimation temperature: 90 °C, lower trace: sublimation temperature, p.60