Broadband Frequency Dispersion Small Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs

Séraphin Dieudonné Nsele (1) , Laurent Escotte (1) , Jean-Guy Tartarin (1) , Stéphane Piotrowicz (2) , Sylvain L. Delage (2)

1 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications
2 III-V Lab - Alcatel-Thalès III-V lab

Frequency dispersion of transconductance and output conductance in AlInN/GaN high electron mobility transistors is investigated in this paper. Broadband dispersion effects in the microwave frequency range are reported for the first time. A small-signal model is developed. Trapping effects are taken into account with parasitic electrical networks including distributed time constants. The model is compared to experimental data for several bias conditions and different types of dispersion.

Domaines: Electronique

Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, Stéphane Piotrowicz, Sylvain L. Delage. Broadband Frequency Dispersion Small Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs. IEEE Transactions on Electron Devices, 2013, 60 (4), pp. 1372-1378. ⟨hal-00859123⟩