Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapordeposition process by tuning the Silicon-environment

Abstract : Results from a study on the charging effect of a-SiOxNy:H thin layers are presented in this paper. Issues related to structural and electrical characterization of these layers are discussed. Spectroscopic ellipsometry was used to determine accurately the layer thickness and their optical properties, while the Kelvin Force Microscopy (KFM) was applied to characterize the local electrical properties of the layers. Obtained results reveal that by tuning the Si-environment in a-SiOxNy:H thin dielectric layers, deposited in plasma assisted process, a strong modification of the surface and volume charge conduction can be achieved. Particularly, increasing Si-content in the a-SiOxNy:H layers rises the volume conduction and charges retention. Thus, local electrical properties of thin dielectric layers can be engineered in order to meet specific requirements.
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https://hal.archives-ouvertes.fr/hal-00878200
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Submitted on : Tuesday, October 29, 2013 - 4:50:20 PM
Last modification on : Wednesday, January 22, 2020 - 10:04:02 AM
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  • HAL Id : hal-00878200, version 1

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Christina Villeneuve, Kremena Makasheva, Caroline Bonafos, B. Despax, Laurent Boudou, et al.. Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapordeposition process by tuning the Silicon-environment. Journal of Applied Physics, American Institute of Physics, 2013, 113 (20), pp.204102. ⟨hal-00878200⟩

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