Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapordeposition process by tuning the Silicon-environment

Christina Villeneuve-Faure (1) , Kremena Makasheva (2) , Caroline Bonafos (3) , Bernard Despax (4) , Laurent Boudou (1) , Patrick Pons (5) , G. Teyssedre (1)

1 LAPLACE-DSF - Diélectriques Solides et Fiabilité
2 LAPLACE-MPP - Matériaux et Procédés Plasmas
3 CEMES - Centre d'élaboration de matériaux et d'études structurales
4 LAPLACE - LAboratoire PLasma et Conversion d'Energie
5 LAAS - Laboratoire d'analyse et d'architecture des systèmes

Results from a study on the charging effect of a-SiOxNy:H thin layers are presented in this paper. Issues related to structural and electrical characterization of these layers are discussed. Spectroscopic ellipsometry was used to determine accurately the layer thickness and their optical properties, while the Kelvin Force Microscopy (KFM) was applied to characterize the local electrical properties of the layers. Obtained results reveal that by tuning the Si-environment in a-SiOxNy:H thin dielectric layers, deposited in plasma assisted process, a strong modification of the surface and volume charge conduction can be achieved. Particularly, increasing Si-content in the a-SiOxNy:H layers rises the volume conduction and charges retention. Thus, local electrical properties of thin dielectric layers can be engineered in order to meet specific requirements.

Domaines: Micro et nanotechnologies/Microélectronique

Christina Villeneuve-Faure, Kremena Makasheva, Caroline Bonafos, Bernard Despax, Laurent Boudou, et al.. Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapordeposition process by tuning the Silicon-environment. Journal of Applied Physics, 2013, 113 (20), pp.204102. ⟨hal-00878200⟩