Modelling and engineering of stress based controlled oxidation effects for silicon nanostructures patterning

Xiang-Lei Han (1) , Guilhem Larrieu (2) , Christophe Krzeminski (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique

Silicon nanostructure patterning with a tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears as an efficient tools for precise nanofabrication. Here, we investigate stress-retarded oxidation phenomenon in various silicon nanostructures (nanobeams, nanorings and nanowires) both at the experimental and theoretical levels. Different silicon nanostructures have been fabricated by a top-down approach. A complex dependence of the stress build-up with the nanoobjects dimension, shape and size have been demonstrated experimentally and physically explained by modelling. For the oxidation of a two dimensional nanostructure (nanobeam), a relative independence to size effects have been observed. On the other side, a radial stress increase with geometry downscaling of one dimensional nanostructure (nanowire) have been carefully emphasised. The study of the shape engineering by retarded oxidation effects for vertical silicon nanowires is finally discussed.

Mots clés: ingénerie; transistors verticaux ultimes; modelisation; oxydation du silicium; nanofils

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Xiang-Lei Han, Guilhem Larrieu, Christophe Krzeminski. Modelling and engineering of stress based controlled oxidation effects for silicon nanostructures patterning. Nanotechnology, 2013, 24 (49), pp.495301. ⟨hal-00905392⟩