A K-band BiCMOS Low duty-cycle Resistive Mixer

Alessandro Magnani (1) , Christophe Viallon (1) , Ioan Burciu (1) , Thomas Epert (1) , Mattia Borgarino (2) , Thierry Parra (1)

1 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications
2 UNIMORE - Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia

This paper presents a double-balanced down- converter based on a low duty-cycle passive mixer that translates a 18.8 GHz RF signal into a 1 GHz IF signal. The resistive mixer is driven by two analog specially designed pulse generators in order to provide very low conversion losses at high frequencies. The chip has been processed using a 0.13 μm BiCMOS technology. With a −1.2 dBm input LO power, the overall measured conversion gain is 13.2 dB with an estimated contribution of only −2.1 dB from the passive mixer. The measured noise figure is 6.3 dB. The input- referred 1 dB compression point, hardly limited by the IF amp, is −25.7 dB, with −5 dBm for the mixer itself. Total power consumption is 109 mW.

Mots clés: Resistive Mixer; Low Duty-cycle Passive Mixer; Sampling Mixer; Pulse Generator.; Pulse Generator

Domaines: Electronique

Alessandro Magnani, Christophe Viallon, Ioan Burciu, Thomas Epert, Mattia Borgarino, et al.. A K-band BiCMOS Low duty-cycle Resistive Mixer. IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2014), Jan 2014, Newport Beach, United States. ⟨hal-00907835⟩