Electron and hole spin cooling efficiency in InAs quantum dots: The role of nuclear field

Pascal Desfonds (1) , Benoit Eble (1) , Francois Fras (1) , Christophe Testelin (1) , Frédéric Bernardot (1) , Maria Chamarro (1) , Bernard Urbaszek (2) , Thierry Amand (2) , Xavier Marie (2) , Jean-Michel Gérard (3) , Valerie Thierry-Mieg (4) , Audrey Miard (4) , Aristide Lemaître (4)

1 INSP - Institut des Nanosciences de Paris
2 LPCNO - Laboratoire de physique et chimie des nano-objets
3 INAC - Institut Nanosciences et Cryogénie
4 LPN - Laboratoire de photonique et de nanostructures

The spin dynamics of a resident carrier, hole or electron, in singly charged InAs/GaAs quantum dots has been measured by pump-probe experiments. The relative strength of the hole to the electron hyperfine couplings with nuclei is obtained by studying the magnetic-field dependence of the resident-carrier spin polarization. We find, in good agreement with recent theoretical studies, that the hole hyperfine coupling is ten times smaller than the electron one.

Mots clés: III-V semiconductors; indium compounds; semiconductor quantum dots; spin dynamics; Dynamic properties; Spin waves; Magnetic semiconductors; hyperfine interaction

Domaines: Physique Quantique [quant-ph]

Pascal Desfonds, Benoit Eble, Francois Fras, Christophe Testelin, Frédéric Bernardot, et al.. Electron and hole spin cooling efficiency in InAs quantum dots: The role of nuclear field. Applied Physics Letters, 2010, 96, pp.2108. ⟨10.1063/1.3394010⟩. ⟨hal-00913559⟩