Combined MOS-IGBT-SCR structure for a compact high-robustness ESD power clamp in smart power SOI technology

Houssam Arbess (1) , Marise Bafleur (2) , David Trémouilles (1) , Moustafa Zerarka (1)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAAS-ESE - Équipe Énergie et Systèmes Embarqués

Smart power technologies are required to withstand high ESD robustness, both under powered and unpowered conditions, in particular for automotive and aeronautics applications among many others. They are concurrently confronted to the challenges of high-temperature operation in order to reduce heat sink related costs. In this context, very compact high-robustness ESD protections with low sensitivity to temperature are required. To fulfill this need, we studied a new ESD protection structure that combines in the same component MOS, IGBT and thyristor effects. This is achieved by inserting in the same LDMOS device P+ diffusions in the drain. We studied the impact of N+/P+ ratios on RON and holding current at high temperatures. Structures optimization have been realized with 3D TCAD simulation and experimentally validated. The proposed structures provide a high ESD robustness with small footprint and reduced temperature sensitivity compared to classical solutions. Original design solutions to improve their immunity to latch-up are also presented.

Mots clés: electrostatic discharge; SCR; IGBT; smart power; power clamp

Domaines: Micro et nanotechnologies/Microélectronique

Houssam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka. Combined MOS-IGBT-SCR structure for a compact high-robustness ESD power clamp in smart power SOI technology. IEEE Transactions on Device and Materials Reliability, 2013, 14 (1), pp. 432-440. ⟨10.1109/TDMR.2013.2281726⟩. ⟨hal-00941891⟩