GaSb VCSEL with III-As metamorphic confinement layer grown by molecular beam epitaxy

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Conference papers
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https://hal.archives-ouvertes.fr/hal-00955685
Contributor : Christophe Levallois <>
Submitted on : Wednesday, March 5, 2014 - 9:24:23 AM
Last modification on : Friday, January 10, 2020 - 9:10:14 PM

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  • HAL Id : hal-00955685, version 1

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Laurent Cerruti, Youness Laaroussi, Dorian Sanchez, Christophe Levallois, Cyril Paranthoën, et al.. GaSb VCSEL with III-As metamorphic confinement layer grown by molecular beam epitaxy. euro-MBE conference, Mar 2013, Levi, Finland. pp.240-241. ⟨hal-00955685⟩

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