J. Dubois, P. Brunet, W. Costin, and A. Merstallinger, Friction and fretting on quasicrystals under vacuum, Journal of Non-Crystalline Solids, vol.334, issue.335, pp.335-475, 2004.
DOI : 10.1016/j.jnoncrysol.2003.12.027

J. Dubois, M. De-weerd, J. Brenner, M. Sales, G. Mozdzen et al., Surface energy of complex ??? and simple ??? metallic compounds as derived from friction test in vacuum, Philosophical Magazine, vol.10, issue.6-8, p.797, 2006.
DOI : 10.1016/S0039-6028(98)00363-X
URL : https://hal.archives-ouvertes.fr/hal-00513567

B. Ngoc, C. Geantet, J. Dalmon, M. Aouine, G. Bergeret et al., Quasicrystalline Structures as Catalyst Precursors for Hydrogenation Reactions, Catalysis Letters, vol.214, issue.1, pp.131-59, 2009.
DOI : 10.1007/s10562-009-0018-8
URL : https://hal.archives-ouvertes.fr/hal-00866470

M. Bielmann, A. Barranco, P. Ruffieux, O. Gröning, R. Fasel et al., Formation of Al4Cu9 on the 5 fold Surface of Icosahedral AlPdMn, Advanced Engineering Materials, vol.57, issue.151, 2005.
DOI : 10.1002/adem.200500050

T. Duguet, J. Ledieu, J. M. Dubois, and V. Fournée, Surface alloys as interfacial layers between quasicrystalline and periodic materials, Journal of Physics: Condensed Matter, vol.20, issue.31, p.314009, 2008.
DOI : 10.1088/0953-8984/20/31/314009

T. Duguet, S. Kenzari, V. Demange, T. Belmonte, J. M. Dubois et al., Structurally complex metallic coatings in the Al-Cu system and their orientation relationships with an icosahedral quasicrystal, Journal of Materials Research, vol.6, issue.335, pp.764-772, 2010.
DOI : 10.1557/JMR.2010.0101
URL : https://hal.archives-ouvertes.fr/hal-00831639

K. Tomoharu, K. Eiichi, T. Nobuyuki, N. Tadashi, Y. Hiroshi et al., Metalorganic chemical vapor deposition of aluminum-copper alloy films, Japanese Journal of Applied Physics, vol.32, p.1078, 1993.

K. Eiichi, K. Yumiko, T. Nobuyuki, and O. Tomohiro, Interconnection formation by doping chemical-vapor-deposition aluminum with copper simultaneously: Al-Cu CVD, Journal of The Electrochemical Society, vol.141, pp.3494-3499, 1994.

L. Aloui, T. Duguet, F. Haidara, M. Record, D. Samélor et al., Al???Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post-deposition annealing, Applied Surface Science, vol.258, issue.17, pp.6425-6430, 2012.
DOI : 10.1016/j.apsusc.2012.03.053

F. Senocq, A. Turgambaeva, N. Prud-'homme, U. Patil, V. V. Krisyuk et al., Thermal behaviour of CpCuPEt3 in gas phase and Cu thin films processing, Surface and Coatings Technology, vol.201, issue.22-23, pp.9131-9134, 2007.
DOI : 10.1016/j.surfcoat.2007.05.011
URL : https://hal.archives-ouvertes.fr/hal-00806214

A. E. Turgambaeva, N. Prud-'homme, V. V. Krisyuk, and C. Vahlas, Mass Spectrometric Monitoring of the Gas Phase during the CVD of Copper from Copper Cyclopentadienyl Triethylphosphine, Chemical Vapor Deposition, vol.38, issue.7-9, pp.209-214, 2012.
DOI : 10.1002/cvde.201106972

A. Ludviksson, D. W. Robinson, and J. W. Rogers-jr, The interaction of dimethylethylaminealane and ammonia on clean and oxidized Al(111): atomic layer growth of aluminum nitride, Thin Solid Films, vol.289, issue.1-2, pp.6-13, 1996.
DOI : 10.1016/S0040-6090(96)08896-7

J. Yun, M. Park, and S. Rhee, Fourier transform infrared diagnostics of gas phase reactions in the metalorganic chemical vapor deposition of aluminum from dimethylethylamine alane, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.2, pp.16-419, 1998.
DOI : 10.1116/1.581040

T. C. Xenidou, N. Prud-'homme, C. Vahlas, N. C. Markatos, and A. G. Boudouvis, Reaction and Transport Interplay in Al MOCVD Investigated Through Experiments and Computational Fluid Dynamic Analysis, Journal of The Electrochemical Society, vol.157, issue.12, pp.633-641, 2010.
DOI : 10.1149/1.3493617
URL : https://hal.archives-ouvertes.fr/hal-01180142

T. W. Jang, W. Moon, J. T. Baek, and B. T. Ahn, Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source, Thin Solid Films, vol.333, issue.1-2, pp.137-141, 1998.
DOI : 10.1016/S0040-6090(98)00855-4

T. C. Xenidou, A. G. Boudouvis, N. C. Markatos, D. Samélor, F. Senocq et al., An experimental and computational analysis of a MOCVD process for the growth of Al films using DMEAA, Surface and Coatings Technology, vol.201, issue.22-23, pp.8868-8872, 2007.
DOI : 10.1016/j.surfcoat.2007.04.080
URL : https://hal.archives-ouvertes.fr/hal-00806220

T. C. Xenidou, N. Prud-'homme, L. Aloui, C. Vahlas, N. C. Markatos et al., Shape Optimization of a Showerhead System for the Control of Growth Uniformity in a MOCVD Reactor Using CFD-based Evolutionary Algorithms, ECS Transactions, pp.25-1053, 2009.
DOI : 10.1149/1.3207705

S. D. Hersee and J. M. Ballingall, The operation of metalorganic bubblers at reduced pressure, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.8, issue.2, pp.800-804, 1990.
DOI : 10.1116/1.576921

C. Vahlas, B. Caussat, F. Senocq, W. L. Gladfelter, L. Aloui et al., A Delivery System for Precursor Vapors Based on Sublimation in a Fluidized Bed, Chemical Vapor Deposition, vol.7, issue.09, pp.123-129, 2007.
DOI : 10.1002/cvde.200606513

J. M. Vandenberg and R. A. Hamm, An in situ X-ray study of phase formation in Cu???Al thin film couples, Thin Solid Films, vol.97, issue.4, p.313, 1982.
DOI : 10.1016/0040-6090(82)90523-5

H. G. Jiang, J. Y. Dai, H. Y. Tong, B. Z. Ding, Q. H. Song et al., Interfacial reactions on annealing Cu/Al multilayer thin films, Interfacial reactions on annealing Cu/Al multilayer thin films, p.6165, 1993.
DOI : 10.1063/1.355183

F. Haidara, M. Record, B. Duployer, and D. Mangelinck, Investigation of reactive phase formation in the Al???Cu thin film systems, Surface and Coatings Technology, vol.206, issue.19-20, pp.3851-3856, 2012.
DOI : 10.1016/j.surfcoat.2012.01.065

J. M. Dubois, A model of wetting on quasicrystals in ambient air, Journal of Non-Crystalline Solids, vol.334, issue.335, pp.481-485, 2004.
DOI : 10.1016/j.jnoncrysol.2003.12.041

R. N. Wenzel, RESISTANCE OF SOLID SURFACES TO WETTING BY WATER, Industrial & Engineering Chemistry, vol.28, issue.8, pp.988-994, 1936.
DOI : 10.1021/ie50320a024