Field plate termination for high voltage diamond Schottky diode

Houssam Arbess (1) , Karine Isoird (1)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

New field plate architecture is applied to pseudo vertical diamond Schottky diode. New topology structure has been proposed and simulated using Sentaurus TCAD simulation in order to minimize the maximum electric field in the dielectric at high voltage operation. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning Emax in the dielectric, we obtained high decreasing of the maximum electric field following the policy of pressure distribution.

Domaines: Micro et nanotechnologies/Microélectronique

Houssam Arbess, Karine Isoird. Field plate termination for high voltage diamond Schottky diode. International Conference on Microelectronics ( ICM ) 2013, Dec 2013, Beyrouth, Lebanon. pp.25-28. ⟨hal-01004604⟩