Experimental validation of the "FLoating Island" concept: A 95 Volts Vertical breakdown voltage FLIDiode

Stéphane Alves (1) , Frédéric Morancho (2) , Jean Michel Reynes , J. Margherita , I. Deram , Karine Isoird (1)

1 LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

In this paper, the "FLoating Island" concept has been implemented on silicon: a FLIDiode has been built for the first time. Experimental results confirm the predictive 2D simulations: this new diode exhibits an important breakdown voltage (about 95 Volts) with a N- epitaxial layer doping concentration (1.1 x 1016 cm-3) usually dedicated to 50 Volts devices. These measurements validate the "FLoating Island" concept and the efficiency of the original edge cell that will be used in the FLIMOS technology: it can be expected that the specific onresistance of the FLIMOSFET will be drastically reduced compared to the conventional VDMOSFET.

Mots clés: Floating Island; FLIMOS; Superjunction; Breakdown Voltage; Specific On-Resistance

Domaines: Micro et nanotechnologies/Microélectronique

Stéphane Alves, Frédéric Morancho, Jean Michel Reynes, J. Margherita, I. Deram, et al.. Experimental validation of the "FLoating Island" concept: A 95 Volts Vertical breakdown voltage FLIDiode. 7th International Seminar on Power Semiconductors (ISPS'04), Aug 2004, Pragues, Czech Republic. pp.47-50. ⟨hal-01005655⟩