Analysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature

Gaëtan Toulon (1) , Abdelhakim Bourennane (1) , Karine Isoird (2)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes

In high current, high voltage, high temperature (T > 125 °C) power applications, commercially available conventional silicon thyristors are not suited because they present high leakage current. In this context, this paper presents a high-symmetrical (voltage) thyristor structure that presents a lower leakage current and higher breakover voltage as compared with the conventional thyristor at T > 125 °C. It is shown through 2-D physical simulations that the replacement of the P-emitter of a standard symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward blocking state at high temperature. A fine tune of the anode side configuration will improve the forward OFF-state behavior with only a negligible ON-state voltage drop degradation. Moreover, the comparison with the conventional anode short thyristor shows that the insertion of Schottky contacts leads to the same improvements in terms of OFF-state forward break over voltage and leakage current and also presents a high reverse blocking voltage.

Mots clés: High temperature; high voltage thyristor; pulsed power; Schottky contacts; technological computer aided design (TCAD) simulations.; technological computer aided design (TCAD) simulations

Domaines: Micro et nanotechnologies/Microélectronique

Gaëtan Toulon, Abdelhakim Bourennane, Karine Isoird. Analysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature. IEEE Transactions on Electron Devices, 2013, 60 (11), p 3814-3820. ⟨10.1109/TED.2013.2280554⟩. ⟨hal-01019388⟩