Threshold sensor for high-doses of radiation

Izabela Augustyniak (1) , Pawel Knapkiewicz (2) , Jan Dziuban (2) , Michal Olszacki (3) , A. Tchkalov (4) , Patrick Pons (5)

1 Faculty of Microsystem Electronics and Photonics
2 Wroclaw University of Science and Technology
3 NCBJ - National Center for Nuclear Research
4 National Technical University of Ukraine "Kyiv Polytechnic Institute" [Kiev]
5 LAAS-MINC - Équipe MIcro et Nanosystèmes pour les Communications sans fil

MEMS threshold sensor for high-doses of radiation (above 10 kGy) has been design and development. In the sensor, small portion of high density polyethylene (HDPE) is trapped inside silicon-glass MEMS hermetically sealed structure. When the sensor is exposed to ionizing radiation, HDPE degrades and releases atomic hydrogen. The resulting pressure of hydrogen destroys thin silicon membrane of the sensor. The proper parameters of the silicon membrane of the sensor have been selected by simulations in ANSYS software

Mots clés: MEMS sensor; radiation sensor; modeling of silicon membrane

Domaines: Micro et nanotechnologies/Microélectronique

Izabela Augustyniak, Pawel Knapkiewicz, Jan Dziuban, Michal Olszacki, A. Tchkalov, et al.. Threshold sensor for high-doses of radiation. Int. Conf. On Mixed design of Integrated Circuits and Systems (MIXDES), Jun 2014, Lublin, Poland. pp.MIXDES Proceedings. ⟨hal-01024223⟩