Scalable normally-off MIS-HEMT using Fluorine implantation below the channel

Saleem Hamady (1) , Frédéric Morancho (2) , Bilal Beydoun (3) , Patrick Austin (1) , Mathieu Gavelle (2)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 LU / ULB - الجامعة اللبنانية [بيروت] = Lebanese University [Beirut] = Université libanaise [Beyrouth]

A new normally-off Metal-Insulator- Semiconductor High-Electron-Mobility-Transistor (MIS-HEMT) is proposed. The design is based on the implantation of fluorine ions in the GaN layer below the gate electrode under the AlGaN/GaN interface. Sensitivity analyses are carried out, showing the effects of the fluorine concentration and the thickness of the insulator on the threshold voltage. The limitations and scalability of this technique are pointed out.

Domaines: Electronique

Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. Scalable normally-off MIS-HEMT using Fluorine implantation below the channel. SPEEDAM 2014, Jun 2014, Ischia, Italy. ⟨hal-01054228⟩