High aspect ratio deep etching in GaInAsSb/AlGaAsSb system by ICP-RIE plasma

Brice Adelin (1, 2) , Alexandre Larrue (1, 2) , Aurélie Lecestre (1, 2) , Pascal Dubreuil (1, 2) , Yves Rouillard (3, 4) , Guilhem Boissier (3, 4) , Aurore Vicet (3, 4) , Antoine Monmayrant (1, 2) , Olivier Gauthier-Lafaye (1, 2)

1 LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LAAS-PHOTO - Équipe Photonique
3 IES - Institut d’Electronique et des Systèmes
4 NANOMIR - Composants à Nanostructure pour le moyen infrarouge

GaSb based compound semiconductors emit in the mid-infrared range and present extremely good optoelectronic properties, with demonstrated bipolar laser diodes emitting from 2 to 3.5 µm with good performances. Such diodes are often made with a core waveguide embedded in claddings made of AlGaAsSb with high Al content. Deep etching of high Al content claddings is known to be a particular challenge for deep etching with high aspect ratio, and restricts the designs achievable for laser diodes fabrication. In this paper, we present our work on deep etching of sub-micron air holes in GaInAsSb/AlGaAsSb heterostructures with 65% Al content. High aspect ratio of 7 is achieved for 350 nm diameter holes.

Domaines: Physique [physics]; Optique [physics.optics]

Brice Adelin, Alexandre Larrue, Aurélie Lecestre, Pascal Dubreuil, Yves Rouillard, et al.. High aspect ratio deep etching in GaInAsSb/AlGaAsSb system by ICP-RIE plasma. Plasma Etch and Strip in Microtechnology ( PESM ) 2014, May 2014, Grenoble, France. ⟨hal-01102388⟩